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1SS362
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DataSheet
General Description
1SS362 Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit |
| Maximum (peak) reverse voltage |
VRM |
85 |
V |
| Reverse voltage |
VR |
80 |
V |
| Maximum (peak) forward current |
IFM |
240 * |
mA |
| Average forward current |
IO |
80 * |
mA |
| Surge current (10ms) |
IFSM |
1 * |
A |
| Power dissipation |
P |
100 |
mW |
| Junction temperature |
Tj |
125 |
|
| Storage temperature |
Tstg |
−55∼125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating * 0.7
1SS362 Typical Application
·Small package
·Low forward voltage : VF = 0.97V (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance : CT = 0.5pF (typ.)
·Low forward voltage : VF = 0.97V (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance : CT = 0.5pF (typ.)
1SS362
PDF/DataSheet Download
- Datasheet: 1SS362
- File Size: 125272 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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