1SS383

Features:

`Small package
` Composed of 2 independent diodes.
`Low forward voltage: V<sub>F</sub> (3) = 0.54V (typ.)
`Low reverse current: I_R = 5A (max)




Pinout






Specifications

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse Voltage	VRM	45	V
Reverse Voltage	VR	40	V
Maximum (peak) forward current	IFM	300*	mA
Average forward current	IO	100*	mA
Surge current (10ms)	IFSM	1*	A
Power Dissipation	P	100*	mW
Junction temperature	Tj	125
Storage temperature range	Tstg	-55~125
Operating temperature range	Topr	−40~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating * 1.5