Features: LINEAR CURRENT LIMITATIONTHERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PINESD PROTECTIONDIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFETPinoutSpecification...
200807101804256520: Features: LINEAR CURRENT LIMITATIONTHERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PINESD PROTECTIONDIRECT ACCESS TO TH...
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Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...

|
Parameter |
Symbol |
Value |
Einheit Unit | ||||
| SO-8 | DPAK | TO-220 | IPAK | D2PAK | |||
|
Drain-source Voltage (VIN=0V) |
VDS |
Internally Clamped |
°C | ||||
|
Input Voltage |
VIN |
Internally Clamped |
°C | ||||
|
Input Current |
IIN |
+/-20 |
°C | ||||
|
Minimum Input Series Impedance |
RIN MIN |
10 |
mA | ||||
|
Drain Current |
ID |
Internally Clamped |
MA | ||||
|
Reverse DC Output Current |
IR |
-15 |
mW | ||||
|
Electrostatic Discharge (R=1.5KW, C=100pF) |
VESD1 |
4000 |
K/W | ||||
|
Electrostatic Discharge on output pin only (R=330W, C=150pF) |
VESD2 |
16500 |
K/W | ||||
|
Total Dissipation at Tc=25°C |
P tot |
8.3 |
50 |
70 |
50 |
70 |
K/W |
|
Operating Junction Temperature |
Tc |
Internally limited |
K/W | ||||
|
Storage Temperature |
Tstg |
-55 to 150 |
K/W | ||||
The VNB14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNS14NV04, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, VNB14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNS14NV04, are intended for replacement ofstandard Power MOSFETS from DC up to 50KHz applications.Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.