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200809272100183787

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge·Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Dr...

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200809272100183787: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge·Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light We...

200809272100183787 Data Sheet

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Part Number:
200809272100183787
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
·Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
45
A
ID@ VGS = 12V, TC = 100°C
 Continuous Drain Current
28
IDM
 Pulsed Drain Current 
180
PD @ TC = 25°C
 Max. Power Dissipation
250
W
 Linear Derating Factor
2.0
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy 
222
mJ
IAR
 Avalanche Current 
45
A
EAR
 Repetitive Avalanche Energy 
250
mJ
dv/dt
 Peak Diode Recovery dv/dt 
5.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
 
Pckg. Mounting Surface Temp.
300 (for 5s)
  Weight

3.3 (Typical)
g



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