Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ballasting resistors• Gold metallization system• Internal input and output impedance mat...
200809272142351228: Features: • NPN silicon microwave power transistors• Common base configuration• Broadband Class C operation• High efficiency inter-digitized geometry• Diffused emitter ...
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Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
|
Parameter |
Symbol |
Rating |
Units |
| Collector-Emitter Voltage |
VCES |
65 |
V |
| Emitter-Base Voltage |
VEBO |
3.0 |
V |
| Collector Current (Peak) |
IC |
15.0 |
A |
| Power Dissipation @ +25°C |
PTOT |
500 |
W |
| Storage Temperature |
TSTG |
-65 to+200 |
°C |
| Junction Temperature |
TJ |
200 |
°C |