Features: • Designed for ATC Radar Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metallization System•...
200809272142375027: Features: • Designed for ATC Radar Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdi...
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Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs...
Features: • Choice of CMR performance of 10 kV/µs,5 kV/µs, and 100 V/µs...
Parameter |
Symbol |
Rating |
Units |
Collector-Emitter Voltage |
VCES |
65 |
V |
Emitter-Base Voltage |
VEBO |
3.0 |
V |
Collector Current (Peak) |
IC |
27 |
A |
Power Dissipation @ +25°C |
PD |
TBD |
W |
Storage Temperature |
TSTG |
-65 to+200 |
°C |
Junction Temperature |
TJ |
200 |
°C |