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200809272142398197

Features: ·190W, 53% efficiency, typical RF performance·36V, 24W nominal RF input drive·Designed for ATC radar applications·NPN silicon microwave power transistor·Common base, Class-C configuration·High efficiency inter-digitated geometry·Gold metallization system·Internal input and output pre-mat...

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200809272142398197: Features: ·190W, 53% efficiency, typical RF performance·36V, 24W nominal RF input drive·Designed for ATC radar applications·NPN silicon microwave power transistor·Common base, Class-C configuration·...

200809272142398197 Data Sheet

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Part Number:
200809272142398197
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

·190W, 53% efficiency, typical RF performance
·36V, 24W nominal RF input drive
·Designed for ATC radar applications
·NPN silicon microwave power transistor
·Common base, Class-C configuration
·High efficiency inter-digitated geometry
·Gold metallization system
·Internal input and output pre-matching
·Hermetic metal/ceramic package


Specifications

Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC

27
A
Storage Temperature
TSTG
-65 to+200
°C
Junction Temperature
TJ
200
°C



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