23A008-2

Maximum Power Dissipation @ 25                                     5.0 Watts

Maximum Voltage and Current
BVces              Collector to Emitter Voltage                            50  Volts
BVebo              Emitter to Base Voltage                                  3.5 Volts
I_c                     Collector Current                                               400 mA
Maximum Temperatures

Storage Temperature                                                    - 65 to + 200  
Operating Junction Temperature                                              + 200  

The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz.  This transistor is specifically designed for general Class A amplifier applications.  It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.  The 23A008 uses a fully hermetic High Temperature
Solder Sealed package.