2420-80L

2420-80L is a kind of high speed NPN switching transistor die.The typical applications include low voltage inverters,pulse amplifiers and base drive circuits.

Here you can get some information about the features of 2420-80L. First is NPN planar epitaxial power transistor.The second is about the contact metallization.The base and emitter is aluminum and the collector is alloy gold suitable for euectic mount.Then is complementary die: OTC2220.The last one is about the dimensions.The die size is 0.085*0.085*0.010 inch;the emitter bond area (E) is 0.045*0.012 inch;the base bond area (B) is 0.020*0.011 inch.

What comes next is about the electrical characteristics of 2420-80L at 25.The maximum I_CBO (collector cutoff) is 200 nA at V_CB=100 V,150 nA at V_CB=80 V and 100 nA at V_CB=60 V.The maximum I_CES (collector emitter) is 100 nA at V_CE=60 V.The maximum I_EBO (emitter cutoff) is 100 nA at V_EB=3 V.The minimum BV_CBO (collector base) is 120 V at I_C=100A.The minimum BV_CEO (collector emitter) is 80 V at I_C=50A.The minimum BV_EBO (emitter base) is 6 V at I_E=10A.The minimum h_FE (DC current gain) is 50 and the maximum is 150 at I_C=1 A,V_CE=2 V pulsed.The minimum h_FE (DC current gain) is 10 at I_C=5 A,V_CE=2 V pulsed.The maximum V_CE(sat) (collector saturation) is 1 V at I_C=5 A,I_B=500 mA.The maximum V_BE(sat) (emitter base saturation) is 1.5 V at I_C=5 A,I_B=500 mA.The maximum T_on (t_d+t_r) is 140 ns,the maximum t_s (storage time) is 400 ns and the maximum t_f (fall time) is 100 ns at V_CC=30 V,I_C=1 A,I_B1=I_B2=20 mA,PW=10s.The maximum C_OB (output capacitance) is 100 pF at V_CB=10 V.The minimum f_t (gain bandwidth) is 80 at I_C=500 mA,V_CE=5 V.