24SW

Features:

• 24 independently switchable power FETs
• Low equivalent on resistance (200 m typ)
• 2A switching current per channel
• No derating required to 90
• Total dose hardness: depending upon space mission in
   RAD-PAK^®
• Package: 176-pin quad flat pack


Specifications

 

PARAMETER	SYMBOL	MIN	MAX	UNIT
Supply Voltage Range	V15V	--	16.5	V
	V-15V	-16.5	--	V
Switch Input Voltage Range		-1.0	40	V
Storage Temperature Range	TS	-55	125
Operational Temperature Range	TA	-40	110
Maximum Power Dissipation Per Switch Per Module	PD	-- --	2.04 10.0	W
Thermal Resistance, Junction to Mounting Base of Case	JC	--	6.5	/W
Junction Temperature	TJ	--	125

Description

Maxwell Technologies 24SW multi-chip module (MCM) 24 channel MOSFET driver uses Maxwell Technologies' patented radiation-hardened RAD-PAK^® MCM packaging technology. The 24SW is a radiation hardened MOSFET driver for space applications.

The 24SW incorporates twenty-four independent pchannel MOSFETs, along with interface components, that can switch up to 2A per channel. The R_DS-ON of the MOSFET is typically less than 200m.

Maxwell Technologies' patented RAD-PAK^® packaging technology incorporates radiation shielding in the microcircuit package. 24SW eliminates the need for box shielding while improving the TID performance in most space environments. This product is available with screening up to Maxwell Technologies self-defined Class K.