2729-125 Selling Leads, Price trend, 2729-125 DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter to Base Voltage (BVebo)......................... 3.0 VCollector Current (Ic) ..........................

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SeekIC No. : 004217775 Detail

2729-125: SpecificationsMaximum Power DissipationDevice Dissipation @ 251 ................................350 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)........................ 65 VEmitter ...

2729-125 Data Sheet

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Part Number:: 2729-125
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2024/4/27

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Product Details

Description

Specifications

Maximum Power Dissipation
Device Dissipation @ 25¹ ................................350 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)........................ 65 V
Emitter to Base Voltage (BV_ebo)......................... 3.0 V
Collector Current (I_c) ...........................................15 A
Maximum Temperatures
Storage Temperature........................... -65 to +200
Operating Junction Temperature..................... +200

Description

The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. 2729-125 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.

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