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Part Number: 2729-170
Description: The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts o...
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2729-170
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DataSheet
General Description
2729-170 General Description
The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
2729-170 Maximum Ratings
Maximum Power Dissipation
Device Dissipation @ 251 570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.0 V
Collector Current (Ic) 17 A
Maximum Temperatures
Storage Temperature -65 to +200
Operating Junction Temperature +200
Device Dissipation @ 251 570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.0 V
Collector Current (Ic) 17 A
Maximum Temperatures
Storage Temperature -65 to +200
Operating Junction Temperature +200
272.001
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- Datasheet: 272.001
- File Size: 95758 KB
- Manufacturer: LITTELFUSE [Littelfuse]
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- ·272.002
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- ·272.005
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- ·272.01.5
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- ·272.010
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
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- ·272.015
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
- 95758 KB
- ·272.031
- LITTELFUSE [Littelfuse]
- Axial Lead and Cartridge Fuses
- 95758 KB
2729-170 Relative Products
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The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized ...
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