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Part Number: 2731-100M

 

 

 

 

Description: The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts ...


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2731-100M General Description


The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.

2731-100M Maximum Ratings

Maximum Power Dissipation
Device Dissipation @ 251                        575 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)                65 V
Emitter to Base Voltage (BVebo)                3.0 V
Collector Current (Ic)                               15.0 A
Maximum Temperatures
Storage Temperature                 -65 to +200
Operating Junction Temperature          +200

2731-100M datasheet

273.001
PDF/DataSheet Download

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