28C011T

Features:

• 128k x 8-bit EEPROM
•RAD-PAK® radiation-hardened against natural space radia-tion
• Total dose hardness:
   - > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
   - No Latchup > 120 MeV/mg/cm2
   - SEU > 90 MeV/mg/cm2 read mode
• Package:
   - 32-pin RAD-PAK® flat package
   - 32-pin Rad-Tolerant flat package
   - JEDEC-approved byte-wide pinout
• High speed:
   - 120, 150, and 200 ns maximum access times available
• High endurance:
  - 10,000 erase/write (in Page Mode),
  - 10 year data retention
• Page write mode:
  - 1 to 128 bytes
• Low power dissipation
  - 20 mW/MHz active (typical)
  - 110 µW standby (maximum)


Pinout




Specifications

PARAMETER	SYMBOL	MIN	MAX	UNITS
Supply Voltage (Relative to VSS)	VCC	-0.6	+7.0	V
Input Voltage (Relative to VSS)	VIN	-0.5 1	+7.0	V
Operating Temperature Range	TOPR	-55	+125	°C
Storage Temperature Range	TSTG	-65	+150	°C

Description

Maxwell Technologies' 28C011T high-density 1 Megabit (128Kx 8-Bit) EEPROM microcircuit features a greater than 100krad (Si) total dose tolerance, depending upon space mission.The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function
to make its erase and write operations faster. It also features data polling and a Ready/ Busy signal to indicate the comple-tion of erase and programming operations. In the 28C010T,hardware data protection is provided with the RESpin, in addi-tion to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R_AD-P_AK^® packaging technol-ogy incorporates radiation shielding in the microcircuit pack-age. 28C011T eliminates the need for box shielding while providingthe required radiation shielding for a lifetime in orbit or spacemission. In a GEO orbit, R_AD-P_AK^® provides greater than 100krad (Si) radiation dose tolerance. This product is availablewith screening up to Class S.