28F016SA

Features: User-Selectable 3.3V or 5V VCCUser-Configurable x8 or x16 Operation70 ns Maximum Access Time28.6 MB/sec Burst Write Transfer Rate1 Million Typical Erase Cycles per Block56-Lead, 1.2 mm x 14 mm x 20 mmTSOP Package56-Lead, 1.8 mm x 16 mm x 23.7 mm SSOP PackageRevolutionary Architecture?...

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SeekIC No. : 004218184 Detail

28F016SA: Features: User-Selectable 3.3V or 5V VCCUser-Configurable x8 or x16 Operation70 ns Maximum Access Time28.6 MB/sec Burst Write Transfer Rate1 Million Typical Erase Cycles per Block56-Lead, 1.2 mm x 1...

floor Price/Ceiling Price

Part Number:
28F016SA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2020/4/2

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Product Details

Description



Features:

User-Selectable 3.3V or 5V VCC
User-Configurable x8 or x16 Operation
70 ns Maximum Access Time
28.6 MB/sec Burst Write Transfer Rate
1 Million Typical Erase Cycles per Block
56-Lead, 1.2 mm x 14 mm x 20 mmTSOP Package
56-Lead, 1.8 mm x 16 mm x 23.7 mm SSOP Package
Revolutionary Architecture
Pipelined Command Execution
Program during Erase
Command Superset of Intel 28F008SA
1 mA Typical ICC in Static Mode
1 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash Technologyn User-Selectable 3.3V or 5V VCC



Specifications

Temperature under Bias.....................0°C to +80°C
Storage Temperature..................65°C to +125°C
VCC = 3.3V ± 10% Systems
Sym Parameter
Notes
Min
Max
Units
Test Conditions
TA Operating Temperature, Commercial
1
0
70
°C
Ambient Temperature
VCC VCC with Respect to GND
2
0.2
7.0
V
VPP VPP Supply Voltage with Respect to GND
2,3
0.2
14.0
V
V Voltage on any Pin (except VCC,VPP) with
Respect to GND
2
0.5
VCC
+0.5
V
I Current into any Non-Supply Pin
5
± 30
mA
IOUT Output Short Circuit Current
4
100
mA

VCC = 5.0V ± 10% , VCC = 5.0V ± 5% Systems(6)

Sym Parameter
Notes
Min
Max
Units
Test Conditions
TA Operating Temperature, Commercial
1
0
70
°C
Ambient Temperature
VCC VCC with Respect to GND
2
0.2
7.0
V
VPP VPP Supply Voltage with Respect to GND
2,3
0.2
14.0
V
V Voltage on any Pin (except VCC,VPP) with
Respect to GND
2
2.0
7.0
V
I Current into any Non-Supply Pin
5
± 30
mA
IOUT Output Short Circuit Current
4
100
mA
<


Description

Intel's 28F016SA 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA enables the design of truly mobile, high-performance communications and computing products.

The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit FlashFile memory), extended cycling, extended temperature operation, flexible VCC, fast program and read performance and selective block locking provide highly flexible memory components suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage enables the design of memory cards which can be interchangeably read/written in 3.3V and 5.0V systems. Its x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance and flexible block locking enable both storage and execution of operating  systems  and application software. Manufactured on Intel's 0.6 µm ETOX IV process technology, the 28F016SA is the most cost-effective,highest density monolithic 3.3V FlashFile memory. 


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