28F016SA

Features:

User-Selectable 3.3V or 5V VCC
User-Configurable x8 or x16 Operation
70 ns Maximum Access Time
28.6 MB/sec Burst Write Transfer Rate
1 Million Typical Erase Cycles per Block
56-Lead, 1.2 mm x 14 mm x 20 mmTSOP Package
56-Lead, 1.8 mm x 16 mm x 23.7 mm SSOP Package
Revolutionary Architecture
 Pipelined Command Execution
 Program during Erase
 Command Superset of Intel 28F008SA
1 mA Typical ICC in Static Mode
1 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash Technologyn User-Selectable 3.3V or 5V VCC



Specifications

Temperature under Bias.....................0°C to +80°C
Storage Temperature..................65°C to +125°C
V_CC = 3.3V ± 10% Systems

Sym	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2	0.5	VCC +0.5	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

V_CC = 5.0V ± 10% , V_CC = 5.0V ± 5% Systems⁽⁶⁾

Sym	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2	2.0	7.0	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

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Description

Intel's 28F016SA 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA enables the design of truly mobile, high-performance communications and computing products.

The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit FlashFile memory), extended cycling, extended temperature operation, flexible VCC, fast program and read performance and selective block locking provide highly flexible memory components suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage enables the design of memory cards which can be interchangeably read/written in 3.3V and 5.0V systems. Its x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance and flexible block locking enable both storage and execution of operating  systems  and application software. Manufactured on Intel's 0.6 µm ETOX IV process technology, the 28F016SA is the most cost-effective,highest density monolithic 3.3V FlashFile memory.