28F016XS

Features:

Effective Zero Wait-State Performance up to 33 MHz
 Synchronous Pipelined Reads
SmartVoltage Technology
 User-Selectable 3.3V or 5V VCC
 User-Selectable 5V or 12V VPP
0.33 MB/sec Write Transfer Rate
Configurable x8 or x16 Operation
56-Lead TSOP and SSOP Type I Package
Backwards-Compatible with 28F008SA Command-Set
2 µA Typical Deep Power-Down
1 mA Typical Active ICC Current in Static Mode
16 Separately-Erasable/Lockable128-Kbyte Blocks
1 Million Erase Cycles per Block
State-of-the-Art 0.6 µm ETOX™ IV FlashTechnology


Pinout




Specifications

Temperature Under Bias ......................0°C to +80°C
Storage Temperature ...................65°C to +125°C
V_CC = 3.3V ± 5% Systems

Symbol	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2,5	0.5	VCC + 0.5	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

V_CC = 5.0V ± 5% Systems

Symbol	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2,5	2.0	7.0	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

Description

Intel's 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution  memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-xecute code and mass storage data/file flash memory systems.

The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution available today. Its synchronous pipelined read interface, flexible V_CC and V_PP voltages, extended  cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the  system  board or SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read performance up to 33 MHz. The 28F016XS's dual read voltage allows the same component to operate at either 3.3V or 5.0V V_CC. Programming voltage at 5V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V_PP option maximizes program/erase performance. Its high read performance combined with flexible block locking enable both storage and execution of operating  systems/application software and fast access to large data tables. The 28F016XS is manufactured on Intel's 0.6 µm ETOX IV process technology.