28F160F3

Features:

High Performance
 -54 MHz Effective Zero Wait-State Performance
 -Synchronous Burst-Mode Reads
 -Asynchronous Page-Mode Reads
SmartVoltage Technology
 -2.7 V−3.6 V Read and Write Operations for Low Power Designs
 -12 V V_PP Fast Factory Programming
Flexible I/O Voltage
 -1.65 V I/O Reduces Overall SystemPower Consumption
 -5 V-Safe I/O Enables Interfacing to 5 V Devices
Enhanced Data Protection
 -Absolute Write Protection with V_PP = GND
 -Block Locking
 -Block Erase/Program Lockout during Power Transitions
Density Upgrade Path
 -8- and 16-Mbit
Manufactured on ETOX™ V Flash Technology
Supports Code Plus Data Storage
 -Optimized for Flash Data Integrator (FDI) Software
 -Fast Program Suspend Capability
 -Fast Erase Suspend Capability
Flexible Blocking Architecture
 -Eight 4-Kword Blocks for Data
 -32-Kword Main Blocks for Code
 -Top or Bottom Configurations Available
Extended Cycling Capability
 -Minimum 10,000 Block Erase Cycles uaranteed
Low Power Consumption
  -Automatic Power Savings Mode Decreases Power Consumption
Automated Program and Block Erase Algorithms
 -Command User Interface for Automation
 -Status Register for System Feedback
Industry-Standard Packaging
 -56-Lead SSOP
 -µBGA* CSP


Pinout




Specifications

Temperature under Bias ............ 40 °C to +125 °C
Storage Temperature................. 65 °C to +125 °C
Voltage On Any Pin
         (except V_CC, V_CCQ, and V_PP)0.5 V to +5.5 V⁽¹⁾
V_PP Voltage ............................0.5 V to +13.5 V^(1,2,4)
V_CC and V_CCQ Voltage .................. 0.2 V to +5.0 V⁽¹⁾
Output Short Circuit Current.........................100 mA⁽³⁾


Description

Intel's Fast Boot Block memory family renders high performance asynchronous page-mode and synchronous burst reads making it an ideal memory solution for burst CPUs. Combining high read performance with the intrinsic non-volatility of flash memory, 28F160F3 eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory for improved system performance. Therefore, it reduces the total memory requirement which helps increase reliability and reduce overall system power consumption and cost.

28F160F3 is manufactured on Intel's 0.4 µm ETOX™ V process technology. They are available in industry-standard packages: the  µBGA* CSP, ideal for board-constrained applications, and the rugged 56-lead SSOP.