29F0408

Features: • Single 5.0 V supply• Excellent Single Event Effect·-SELTH: > 60 MeV/mg/cm2·-SEUTH: = 37 MeV/mg/cm2 - SEU saturated cross section: 2E-6 cm2/bit• Organization: - Memory cell array: (4M + 128k) bit x 8bit - Data register: (512 + 16) bit x 8bit• Automatic program...

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29F0408 Picture
SeekIC No. : 004218355 Detail

29F0408: Features: • Single 5.0 V supply• Excellent Single Event Effect·-SELTH: > 60 MeV/mg/cm2·-SEUTH: = 37 MeV/mg/cm2 - SEU saturated cross section: 2E-6 cm2/bit• Organization: - Memor...

floor Price/Ceiling Price

Part Number:
29F0408
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2020/4/8

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Product Details

Description



Features:

• Single 5.0 V supply
• Excellent Single Event Effect
·-SELTH: > 60 MeV/mg/cm2
·-SEUTH: = 37 MeV/mg/cm2
   - SEU saturated cross section: 2E-6 cm2/bit
• Organization:
   - Memory cell array: (4M + 128k) bit x 8bit
   - Data register: (512 + 16) bit x 8bit
• Automatic program and erase
   - Page program: (512 + 16) Byte
   - Block erase: (8K + 256) Byte
   - Status register
• 528-Byte page read operation
   - Random access: 10 µ s (max)
   - Serial page access: 50 ns (min)
• Fast write cycle time
   - Program time: 250 µ s (typ)
   - Block erase time: 2 ms (typ)
• Command/address/data multiplexed I/O port
• Hardware data protection
   - Program/erase lockout during power transitions
• Reliable CMOS floating-gate technology
   - Endurance: 1,000,000 program/erase cycles
   - Data retention: 10 years
• Command register operation
• 44 pin flat package



Pinout

  Connection Diagram


Specifications

PARAMETER
SYMBOL
MIN
MAX
UNIT
Voltage on any pin relative to VSS
VIN
-0.6
7.0
V
Operating Temperature
TBIAS
-40
125
°C
Storage temperature
TSTG
-65
150
°C
Short circuit output current
IOS
--
5
mA



Description

Maxwell Technologies' 29F0408 high-performance flash mem-ory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program oper-ation programs the 528-byte page in 250 µ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte.The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and inter-nal verify and margining of data. Even write-intensive systems can take advantage of the 29F0408's extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass stor-age applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 29F0408 is an optimum solution for large non-volatile storage applications such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

Maxwell Technologies' patented RAD-PAK® packaging technol-ogy incorporates radiation shielding in the microcircuit pack-age. Capable of surviving in space environments, the 29F0408 is ideal for satellite, spacecraft, and space probe missions. It is available with packaging and screening up to Class S. 


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