Purchase 29F0408, In-stock 29F0408 From SeekIC.
Part Number: 29F0408
Description: Maxwell Technologies' 29F0408 high-performance flash mem-ory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory...
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29F0408
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DataSheet
General Description
29F0408 General Description
Maxwell Technologies' 29F0408 high-performance flash mem-ory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program oper-ation programs the 528-byte page in 250 µ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte.The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and inter-nal verify and margining of data. Even write-intensive systems can take advantage of the 29F0408's extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass stor-age applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 29F0408 is an optimum solution for large non-volatile storage applications such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.
Maxwell Technologies' patented RAD-PAK® packaging technol-ogy incorporates radiation shielding in the microcircuit pack-age. Capable of surviving in space environments, the 29F0408 is ideal for satellite, spacecraft, and space probe missions. It is available with packaging and screening up to Class S.
29F0408 Maximum Ratings
| PARAMETER |
SYMBOL |
MIN |
MAX |
UNIT |
|---|---|---|---|---|
| Voltage on any pin relative to VSS |
VIN |
-0.6 |
7.0 |
V |
| Operating Temperature |
TBIAS |
-40 |
125 |
°C |
| Storage temperature |
TSTG |
-65 |
150 |
°C |
| Short circuit output current |
IOS |
-- |
5 |
mA |
29F0408 Features
• Single 5.0 V supply
• Excellent Single Event Effect
·-SELTH: > 60 MeV/mg/cm2
·-SEUTH: = 37 MeV/mg/cm2
- SEU saturated cross section: 2E-6 cm2/bit
• Organization:
- Memory cell array: (4M + 128k) bit x 8bit
- Data register: (512 + 16) bit x 8bit
• Automatic program and erase
- Page program: (512 + 16) Byte
- Block erase: (8K + 256) Byte
- Status register
• 528-Byte page read operation
- Random access: 10 µ s (max)
- Serial page access: 50 ns (min)
• Fast write cycle time
- Program time: 250 µ s (typ)
- Block erase time: 2 ms (typ)
• Command/address/data multiplexed I/O port
• Hardware data protection
- Program/erase lockout during power transitions
• Reliable CMOS floating-gate technology
- Endurance: 1,000,000 program/erase cycles
- Data retention: 10 years
• Command register operation
• 44 pin flat package
• Excellent Single Event Effect
·-SELTH: > 60 MeV/mg/cm2
·-SEUTH: = 37 MeV/mg/cm2
- SEU saturated cross section: 2E-6 cm2/bit
• Organization:
- Memory cell array: (4M + 128k) bit x 8bit
- Data register: (512 + 16) bit x 8bit
• Automatic program and erase
- Page program: (512 + 16) Byte
- Block erase: (8K + 256) Byte
- Status register
• 528-Byte page read operation
- Random access: 10 µ s (max)
- Serial page access: 50 ns (min)
• Fast write cycle time
- Program time: 250 µ s (typ)
- Block erase time: 2 ms (typ)
• Command/address/data multiplexed I/O port
• Hardware data protection
- Program/erase lockout during power transitions
• Reliable CMOS floating-gate technology
- Endurance: 1,000,000 program/erase cycles
- Data retention: 10 years
• Command register operation
• 44 pin flat package
29F0408 Connection Diagram
29F0408
PDF/DataSheet Download
- Datasheet: 29F0408
- File Size: 964390 KB
- Manufacturer: MAXWELL [Maxwell Technologies]
- Click here to Download
- ·29F002
- STMICROELECTRONICS [STMicroelectronics]
- 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
- 933679 KB
- ·29F010
- STMICROELECTRONICS [STMicroelectronics]
- 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
- 412640 KB
- ·29F020
- AMD [Advanced Micro Devices]
- 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
- 811980 KB
- ·29F040
- STMICROELECTRONICS [STMicroelectronics]
- 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
- 404202 KB
- ·29F0408RPFB
- MAXWELL [Maxwell Technologies]
- 32 Megabit (4M x 8-Bit) Flash Memory
- 964390 KB
- ·29F0408RPFE
- MAXWELL [Maxwell Technologies]
- 32 Megabit (4M x 8-Bit) Flash Memory
- 964390 KB
- ·29F0408RPFI
- MAXWELL [Maxwell Technologies]
- 32 Megabit (4M x 8-Bit) Flash Memory
- 964390 KB
- ·29F0408RPFS
- MAXWELL [Maxwell Technologies]
- 32 Megabit (4M x 8-Bit) Flash Memory
- 964390 KB
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