29F040A-90

The 29F040A-90 is designed as one kind of 4-Megabit, electrically erasable, read/write non-volatile flash memory device that has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls, which eliminate bus contention issues. And this device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program.

Features of the 29F040A-90 are:(1)5.0V operation for read/write/erase operations;(2)Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns;(3)High performance program/erase speed;(4)Low Standby Current: 1A CMOS standby current-typical and 1mA TTL standby current;(5)Low Power Active Current: 30mA active read current and 30mA program/erase current;(6)Commercial and Industrial Temperature Ranges;(7)0.23 m triple-metal double-poly triple-well CMOS Flash Technology;(8)Embedded Erase and Program Algorithms;(9)Sector Unprotect Mode;(10)Single Sector and Chip Erase.

The absolute maximum ratings of the 29F040A-90 can be summarized as:(1)Input Leakage Current: ±5 A;(2)Supply Current (Standby) TTL: 1.0 MA;(3)Supply Current (Standby) CMOS: 5.0 A;(4)Supply Current (Program or Erase): 30 mA;(5)Input Low Voltage: -0.5 to 0.8 V;(6)Output Low Voltage: 0.45 V;(7)Output High Voltage TTL: 2.4 V;(8)A9 Voltage (Electronic Signature): 10.5 to 11.5 V;(9)A9 Current (Electronic Signature): 100 A. If you want to know more information about the 29F040A-90, please download the datasheet in www.seekic.com or www.chinaicmart.com .