29MPA0373

Features: ·Balanced Design Provides Good Output Match·On-Chip Temperature Compensated Output Power Detector·32.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Vol...

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SeekIC No. : 004218365 Detail

29MPA0373: Features: ·Balanced Design Provides Good Output Match·On-Chip Temperature Compensated Output Power Detector·32.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and ...

floor Price/Ceiling Price

Part Number:
29MPA0373
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Balanced Design Provides Good Output Match
·On-Chip Temperature Compensated Output Power Detector
·32.0 dB Small Signal Gain
·+36.0 dBm Third Order Intercept (OIP3)
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1700 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF TAble4
MTTF Table4
(4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.


Description

Mimix Broadband's four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. 29MPA0373 also includes Lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. 29MPA0373 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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