Transistors Bipolar (BJT) 1000W -20Vceo
2DB1386Q-13: Transistors Bipolar (BJT) 1000W -20Vceo
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 20 V |
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 5 A |
| DC Collector/Base Gain hfe Min : | 120 at 0.5 A at 2 V | Configuration : | Single Dual Collector |
| Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
| Packaging : | Reel |
| Technical/Catalog Information | 2DB1386Q-13 |
| Vendor | Diodes Inc |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-89-3, TO-243-3 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2DB1386Q 13 2DB1386Q13 |