Transistors Bipolar (BJT) 1000W 32Vceo
2DD1766P-13: Transistors Bipolar (BJT) 1000W 32Vceo
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 32 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 82 at 0.5 A at 3 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 220 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Packaging : | Reel |
Technical/Catalog Information | 2DD1766P-13 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
Frequency - Transition | 220MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-89-3, TO-243-3 |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2DD1766P 13 2DD1766P13 2DD1766PDICT ND 2DD1766PDICTND 2DD1766PDICT |