2E1000-70

Features:

·Very Fast access times of 70/90/120 ns.
·User Configurable as 8 / 16 / 32 bit wide.
·Upgradeable footprint.
·Operating Power 1760 mW (max).
·Standby Power 1320 mW (max).
·Package Suitable for Thermal Ladder Applications.
·Single byte and Page Write operation.
·DATA Polling and Toggle Bit for End of Write Detection.
·Hardware and Software Data Protection.
·May be screened in accordance with MIL-STD-883.


Specifications

Temperature Under Bias T_BIAS...................................................................... -55 to +125 °C
Storage Temperature T_STG........................................................................... -65 to +150 °C
All input voltages (including N.C. pins) with Respect to GND V_T................... -0.6 to +6.25 V
All output voltages with respect to GND V_OUT........................................ -0.6 to V_CC +0.6 V
Voltage on OE and A9 with Respect to GND V_OEA ........................................-0.6 to +13.5 V
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated below is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Description

2E1000-70 is a 1Mbit High Speed EEPROM module user configurable as 32Kx32, 64Kx16 or 128Kx8.

Available with access times of 70, 90 & 120ns the device has an industry standard ceramic 66 pin P.G.A footprint.

2E1000-70 features byte and page write facility, 10,000 Write Erase cycle capability and data retention time of 10 years.

The device may be screened in accordance with MIL-STD-883