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2N1711

Transistors Bipolar (BJT) NPN General Purpose

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SeekIC No. : 00204581 Detail

2N1711: Transistors Bipolar (BJT) NPN General Purpose

2N1711 Data Sheet

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Part Number:
2N1711
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.45
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  • $.29
  • Processing time
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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-39
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Maximum Operating Frequency : 100 MHz
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Temperature : + 175 C
Package / Case : TO-39


Specifications

Ratings
Symbol
2N1711
2N1890
100
Unit
Collector-Base Voltage
VCBO
75
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
Total Power Dissipation @ TA = +25 (1)
@ TC = +25 (2)
PT
0.8
3.0
W
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
1) Derate linearly 4.57 mW/ for TA > 25
2) Derate linearly 17.2 mW/ for TC > 25




Parameters:

Technical/Catalog Information2N1711
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-39-3, Metal Can
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N1711
2N1711
497 2594 5 ND
49725945ND
497-2594-5



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