2N1893

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Temperature : + 175 C
Maximum Operating Frequency : 70 MHz
Package / Case : TO-39


Features:

·GENERAL PURPOSE HIGH VOLTAGE DEVICE




Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage (IE = 0)	120	V
VCER	Collector-Emitter Voltage (RBE 10W)	100	V
VCEO	Collector-Emitter Voltage (IB = 0)	80	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector current	0.5	A
Ptot	Total Dissipation at Tamb 25 at TC25 at TC100	0.8 3 1.7	W W W
Tstg	Storage temperature	-65 to 175
Tj	Junction temperature	175

Description

The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating.

Parameters:

Technical/Catalog Information	2N1893
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	500mA
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 5mA, 50mA
Frequency - Transition	70MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-39-3, Metal Can
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N1893 2N1893 497 2637 5 ND 49726375ND 497-2637-5