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MFG:MOT  Package Cooled:CAN  D/C:05+  

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Part Number: 2N1893S

 

MFG: MOT

Package Cooled: CAN

D/C: 05+

 

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2N1893S Maximum Ratings

Rating Symbol Rating Unit
Collector-Emitter voltage VCEO 80 V
Collector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 7.0 V
Collector - Emitter Voltage, RBE = 10 Ohms VCER 100 V
Collector Current, Continuous IC 500 mA
Power Dissipation, TA = 25
Derate above 25
PT 0.8
4.57
mW/

mW/
Power Dissipation, TC = 25
Derate above 25
PT 3.0
17.2
mW/
mW/
Operating Junction Temperature TJ -55 to +200
Storage Temperature TSTG -55 to +200

2N1893S Features

General-purpose low-power NPN silicon transistor.
Housed in TO-39 case.
Also available in chip form using the 4500 chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/182 which Semicoa meets in all cases.

2N1893S datasheet

2N1893S
PDF/DataSheet Download

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