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2N2060

Features: Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270ApplicationMatched, Dual TransistorsLow powerNPN silicon transistorSpecifications Parameter Symbol Rating Unit Collector-Emitter Voltage VCE...

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2N2060: Features: Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270ApplicationMatched, Dual TransistorsLow powerNPN silicon tr...

2N2060 Data Sheet

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Part Number:
2N2060
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Hermetically sealed TO-77 metal can
Also available in chip configuration
Chip geometry 0410
Reference document: MIL-PRF-19500/270
 


Application

Matched, Dual Transistors
Low power
NPN silicon transistor
 


Specifications

Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60 Volts
Collector-Base Voltage V VCBO 100 Volts
Emitter-Base Voltage V VEBO 7 Volts
Collector Current, Continuous I IC 500 mA
Power Dissipation, TA= 25°C
Derate linearly above 25°C 		PT 540 one section
600 both sections
3.08 one section
3.48 both sections 		mW
mW
mW/°C
mW/°C
Power Dissipation, TC= 25°C
Derate linearly above 25°C 		PT 1.5 one section
2.12 both sections
8.6 one section
12.1 both sections 		W
W
mW/°C
mW/°C

Operating Junction Temperature
Storage Temperature

TJ
TSTG 		-65 to +200 °C



Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2060J)
• JANTX level (2N2060JX)
• JANTXV level (2N2060JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request 
 


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