Features: High Reliability Greater Gain StabilityApplicationFast Switching High Frequency Switching and AmplifyingPinoutSpecifications SYMBOL CHARACTERISTIC VALUE UNITS VCBO*VCEO*VEBO* Collector-Base VoltageCollector-Emitter VoltageEmitter-Base Voltage 1501008 VVV IC*IC*IB* Pe...
2N2151: Features: High Reliability Greater Gain StabilityApplicationFast Switching High Frequency Switching and AmplifyingPinoutSpecifications SYMBOL CHARACTERISTIC VALUE UNITS VCBO*VCEO*VEBO*...
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High Reliability
Greater Gain Stability
SYMBOL | CHARACTERISTIC | VALUE | UNITS |
VCBO* VCEO* VEBO* |
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
150 100 8 |
V V V |
IC* IC* IB* |
Peak Collector Current Continuous Collector Current Continuous Base Current |
10 5 2 |
A A A |
TSTG* TJ* * |
Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. |
-65 to 200 -65 to 200 230 |
|
PT* JC |
Power Dissipation TA = 25 TC = 100 Thermal Resistance Junction to Case |
2 30 3.33 |
W |
These power transistors 2N2151 are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain and safe operating areas. 2N2151 are intended for use in Commercial, Industrial, and Military power switching, amplifie and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of 2N2151. The temperature range to 200 permits reliable operation in high ambients, an the hermetically sealed package insures maximum reliability and long life.