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2N2326S
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DataSheet
General Description
2N2326S Maximum Ratings
| Ratings | Sym | 2N2323,S/ 2N2323A,S |
2N2324,S/ 2N2324A,S |
2N2326,S/ 2N2326A,S |
2N2328,S/ 2N2328A,S |
2N2329,S | Unit |
| Reverse Voltage | VRM | 50 | 100 | 200 | 300 | 400 | Vdc |
| Working Peak Reverse Voltage | VRM | 75 | 150 | 300 | 400 | 5000 | Vpk |
| Forward Blocking Voltage | VFBXM | 50(3/4) |
100(3/4) | 200(3/4) | 300(3/4) | 400(3) | Vpk |
| Average Forward Current(1) | IO | 0.22 | Adc | ||||
| Forward Current Surge Peak(2) | IFSM | 15 | Adc | ||||
| Cathode-Gate Current | VKGM | 6 | Vpk | ||||
| Operating Temperature | Top | -65 to +125 |
|||||
| Storage Junction Temp | Tstg | -65 to +150 |
|||||
1) This average forward current is for an ambient temperature of 80 and 180 electrical degrees of conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 ms after switching from the !(R)off! (blocking) to the !(R)on! (conducting) state. This is meas from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
2N2326S
PDF/DataSheet Download
- Datasheet: 2N2326S
- File Size: 61850 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
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