2N2369

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
Package / Case : TO-18
Maximum Operating Frequency : 650 MHz
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V
DC Collector/Base Gain hfe Min : 40 at 10 mA at 1 V


Application

2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


Specifications

DESCRIPTION	SYMBOL	VALUE	UNIT
Collector -Emitter Voltage	VCEO	15	V
Collector -Emitter Voltage	VCES	40	V
Collector -Base Voltage	VCBO	40	V
Emitter -Base Voltage	VEBO	4.5	V
Collector Current Continuous	IC	200	mA
Collector Current Peak(10us pulse)	IC(peak)	500	500mA
Power Dissipation@ Ta=25 degC	PD	360	mW
Derate Above 25 deg C		2.06	mW/degC
@Tc=25 deg C	PD	1.2	W
@Tc=100 deg C	PD	0.68	W
Derate Above100 deg C		6.85	mW/degC
Operating And Storage Junction	Tj, Tstg	-65 to +200	deg C