Purchase 2N2369A1, In-stock 2N2369A1 From SeekIC.
Part Number: 2N2369A1
Description: HIGH SPEED, MEDIUM POWER, NPNSWITCHING TRANSISTOR IN AHERMETICALLY SEALED TO-18 PACKAGEFOR HIGH R...
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2N2369A1
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DataSheet
General Description
2N2369A1 General Description
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
TO-18 PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
2N2369A1 Maximum Ratings
| VCBO | Collector Base Voltage | 40V |
| VCEO | Collector Emitter Voltage | 15V |
| VEBO | Emitter Base Voltage | 4.5V |
| IC | Collector Current | 200mA |
| PD |
Total Device Dissipation@ TA=25°C Derate above 25°C |
360mW 2.06mW / °C |
| PD |
Total Device Dissipation@ TC=25°C Derate above 25°C |
680mW 6.85mW / °C |
| TSTG, TJ | Operating and Storage Temperature Range | 65 to +200°C |
| RJC | Thermal Resistance Junction-Case | 146°C/W |
| RJA | Thermal Resistance Junction-Ambient | 486°C/W |
2N2369A1 Features
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HERMETIC TO18 PACKAGE
• CECC SCREENING OPTIONS
• HERMETIC TO18 PACKAGE
• CECC SCREENING OPTIONS
2N2369A1
PDF/DataSheet Download
- Datasheet: 2N2369A1
- File Size: 22956 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
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The 2N2369A is a kind of NPN silicon switching transistor. There is some information about the maximum ratings of 2N2369A: (1)Collector-Emitter Voltage, VCEO: 15 Vdc; (2)Emitter-Base Voltage, VEBO: 4.5 Vdc; (3)Collector-Base Voltage, VCBO: 40 Vdc; (4)Collec...
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