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2N2857UB

Features: Features• Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0011• Reference document:MIL-PRF-19500/343Application• Ultra-High frequency transistor• Low power• NPN silicon transistorSpecifications Charact...

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2N2857UB: Features: Features• Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0011• Reference document:MIL-PRF-19500/343Application• Ultra...

2N2857UB Data Sheet

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Part Number:
2N2857UB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0011
• Reference document:
MIL-PRF-19500/343


Application

• Ultra-High frequency transistor
• Low power
• NPN silicon transistor


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 Volts
Collector-emitter voltage VCEO 30 Volts
Emitter-base voltage VEBO 3 Volts
Collector current IC 40 mA
Power Dissipation, TA = 25
Derate linearly above 25		 PT 200
1.14		 W
mW/
Power Dissipation, TC = 25
Derate linearly above 25		 PT 300
1.71		 W
mW/
Operating Junction Temperature TJ -65 to +200
Storage Temperature Tstg -65 to +200




Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2857UBJ)
• JANTX level (2N2857UBJX)
• JANTXV level (2N2857UBJV)
• JANS level (2N2857UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request


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