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2N2906A

Transistors Bipolar (BJT) PNP Gen Pur SS

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SeekIC No. : 00206809 Detail

2N2906A: Transistors Bipolar (BJT) PNP Gen Pur SS

2N2906A Data Sheet

floor Price/Ceiling Price

US $ .68~.85 / Piece | Get Latest Price
Part Number:
2N2906A
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.85
  • $.8
  • $.73
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 Maximum Operating Frequency : 200 MHz
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-18 Packaging : Box    

Description

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Packaging : Box
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75
Package / Case : TO-18


Specifications

Ratings

Symbol

All Types

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

600

mAdc

Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2)

PT(1)
PT(2 / 3)

0.4
1.8

W
W

Operating & Storage Junction Temperature Range

Tj, Tstg

-65 to +200

0C

1) Derate linearly 2.28 mW/0C for TA > +250C.
2) Derate linearly 10.3 mW/0C for TC > +250C.
3) For UA and UB surface mount case outlines: PT = 1.16 W;
derate linearly 6.6mW/0C for TC > +250C.






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