Purchase 2N2907ADIE, In-stock 2N2907ADIE From SeekIC.
- Table of contents:
2N2907ADIE
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Suppliers
DataSheet
General Description
2N2907ADIE Maximum Ratings
Vceo Collector-Emitter Voltage 60 Vdc
Vcbo Collector-Base Voltage 60 Vdc
Vebo Emitter-Base Voltage 5.0 Vdc
ic Collector Current- Continuous 600 mAdc
Tj, Tstg Operating Junction & Storage -65 to +200 °C
Temperature Range
Vcbo Collector-Base Voltage 60 Vdc
Vebo Emitter-Base Voltage 5.0 Vdc
ic Collector Current- Continuous 600 mAdc
Tj, Tstg Operating Junction & Storage -65 to +200 °C
Temperature Range
2N2907ADIE Features
ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
LOW VCE(sat): .4V @ IC = 150 mAdc
AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
LOW VCE(sat): .4V @ IC = 150 mAdc
2N2907ADIE
PDF/DataSheet Download
- Datasheet: 2N2907ADIE
- File Size: 45593 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
- ·2N2000
- ETC [ETC]
- alloy-junction germanium transistors
- 274221 KB
- ·2N2001
- ETC [ETC]
- alloy-junction germanium transistors
- 274221 KB
- ·2N2017
- CENTRAL [Central Semiconductor Corp]
- SMALL SIGNAL TRANSISTORS
- 56892 KB
- ·2N2023
- MICROSEMI [Microsemi Corporation]
- SILICON CONTROLLED RECTIFIERS
- 167622 KB
- ·2N2023 SERIES
- 110 Amp RMS SCRs
- 193610 KB
- ·2N2024
- MICROSEMI [Microsemi Corporation]
- SILICON CONTROLLED RECTIFIERS
- 167622 KB
- ·2N2025
- MICROSEMI [Microsemi Corporation]
- SILICON CONTROLLED RECTIFIERS
- 167622 KB
- ·2N2026
- MICROSEMI [Microsemi Corporation]
- SILICON CONTROLLED RECTIFIERS
- 167622 KB
2N2907ADIE Relative Products
2N2907ADCSM
2N2907ACSM
2N2907A
Chip type 2N2907A by Semicoa Semiconductors provides performance similar to these devices.
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2N2907
Chip type 2N2907 by Semicoa Semiconductors provides performance similar to these devices.
2N2906U
2N2906AUB
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