Transistors Bipolar (BJT) PNP G.P. Transistor 4 Pin
2N2907AUA: Transistors Bipolar (BJT) PNP G.P. Transistor 4 Pin
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| Ratings | Symbol | All Types | Unit |
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 0.5 | Vdc |
| Collector Current | IC | 600 | mAdc |
Total Power Dissipation @ TA = +25 @ TC = +25 |
PT(1) PT (2/3) |
0.4 1.8 |
W W |
| Operating & Storage Junction Temperature Range | TJ, TSTY | -65 to +200 |
| Technical/Catalog Information | 2N2907AUA |
| Vendor | TT Electronics/Optek Technology |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 1.16W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 50nA |
| Mounting Type | Surface Mount |
| Package / Case | 4-LCC |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Not Applicable |
| Other Names | 2N2907AUA 2N2907AUA |