2N3019

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Packaging : Bulk
Maximum Operating Temperature : + 175 C
Package / Case : TO-39


Specifications

DESCRIPTION	SYMBOL	VALUE	UNITS
Collector Emitter Voltage	VCEO	80	V
Collector Base Voltage	VCBO	140	V
Emitter Base Voltage	VEBO	7	V
Collector Current	ICM	1	A
Power Dissipation @ Ta=25º C	PD	800	mW
Power Dissipation@ Tc=25ºC		5	W
Junction Temperature	TI	+200	ºC
Storage Temperature	Tstg	-65 to +200	ºC
THERMAL RESISTANCE
Junction to Ambient	Rth(j-a)	218.7	ºC/W
Junction to Case	Rth(j-c)	35	ºC/W

Description

The 2N3019 is a kind of NPN silicon planar epitaxial transistor. It is designed for AF medium power drivers, outputs and switching applications up to 1 Ampere. It is complementory to the PNP 2N4031.

The following is about the absolute maximum ratings of 2N3019 : (1)collector-base voltage, VCBO: 140 V; (2)collector-emitter voltage, VCEO: 80 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, IC: 1 A; (5)total power dissipation, Ptot: 5 W at TC25; 800 mW at TA25; (6)operating junction and storage temperature, Tj, Tstg: -65 to 200.

Then is about the electrical characteristics of 2N3019 (TA=25, unless otherwise noted): (1)collector-base breakdown voltage, BVCBO: 140 V at IC=0.1 mA, IE=0; (2)collector-emitter breakdown voltage, LBVCEO: 80 V at IC=30 mA, IB=0; (3)emitter-base breakdown voltage, BVEBO: 7 V at IE=0.1 mA, IC=0; (4)collector cutoff current, ICBO: 10 nA max at VCB=90 V, IE=0; 10 uA max at VCB=90 V, IE=0, TA=150; (5)emitter cutoff current, IEBO: 10 nA max at VEB=5 V, IC=0; (6)base-emitter saturation voltage, VBE(sat): 1.1 V max at IC=150 mA, IB=15 mA; (7)DC current gain, HFE: 50 min at IC=0.1 mA, VCE=10 V; 90 min at IC=10 mA, VCE=10 V;100 min and 300 max at IC=150 mA, VCE=10 V; 50 min at IC=500 mA, VCE=10 V; 15 min at IC=1 A, VCE=10 V; 40 min at IC=150 mA, VCE=10 V, TA=-55; (8)current gain-bandwidth product, fT: 100 MHz min at IC=50 mA, VCE=10 V; (9)collector-base capacitance, Cob: 12 pF max at VCB=10 V, IE=0; (10)emitter-base capacitance, Cib: 60 pF max at VCB=0.5 V, IC=0.

Parameters:

Technical/Catalog Information	2N3019
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-39-3, Metal Can
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3019 2N3019 497 2634 5 ND 49726345ND 497-2634-5