Transistors Bipolar (BJT) PNP Hi-Spd Sw
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Features: •SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR• HERMETIC CERAMIC SURFACE MOUN...
| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 20 V |
| Emitter- Base Voltage VEBO : | 4 V | DC Collector/Base Gain hfe Min : | 25 |
| Configuration : | Single | Maximum Operating Frequency : | 400 MHz |
| Mounting Style : | Through Hole | Package / Case : | TO-18 |
| Packaging : | Box |