2N3439

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 200 C
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
Maximum Operating Frequency : 15 MHz (Min)
Package / Case : TO-39


Features:

 STMicroelectronics PREFERRED SALESTYPES
NPN TRANSISTOR


Specifications

Symbol	Parameter	Value		Unit
		2N3439	2N3440
VCBO	Collector-Base Voltage (IE = 0)	450	300	V
VCEO	Collector-Emitter Voltage (IB = 0)	350	250	V
VEBO	Emitter-Base Voltage (IC = 0)	7		V
IC	Collector Current	1		A
IB	Base Current	0.5		A
Ptot	Total Dissipation at Tc 25	10		W
Ptot	Total Dissipation at Tamb 50	1		W
Tstg	Storage Temperature	-65 to 200
Tj	Max. Operating Junction Temperature	200

Description

The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industria line-operated applications.

The 2N3439 is particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Parameters:

Technical/Catalog Information	2N3439
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	1A
Power - Max	10W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Frequency - Transition	15MHz
Current - Collector Cutoff (Max)	20A
Mounting Type	Through Hole
Package / Case	TO-39-3, Metal Can
Packaging	Tray
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3439 2N3439 497 2576 5 ND 49725765ND 497-2576-5