2N3441A

The 2N3441A is designed as one kind of NPN power silicon transistor. The absolute maximum ratings of this device can be summarized as:(1)Collector-Emitter Voltage: 140 Vdc;(2)Collector-Base Voltage: 160 Vdc;(3)Collector-Emitter Voltage: 150 Vdc;(4)Emitter-Base Voltage: 7.0 Vdc;(5)Base Current: 2.0 Adc;(6)Collector Current: 3.0 Adc;(7)Total Power Dissipation @ TA = +25 : 3.0 W;(8)Total Power Dissipation @ Tc = +25 : 25 W;(9)Operating & Storage Junction Temperature Range: -65 to +200 .

The electrical characteristics of the 2N3441A can be summarized as:(1)Collector-Emitter Voltage IC = 100 mAdc: 140 Vdc;(2)Collector-Emitter Breakdown Voltage IC = 100 mAdc, RBE = 100 : 150 Vdc;(3)150 Vdc: 1.0 mAdc;(4)Emitter-Base Cutoff Current: 1.0 mAdc;(5)Collector-Emitter Saturation Voltage: 1.0 Vdc;(6)Base-Emitter Voltage: 1.7 Vdc;(7)Output Capacitance: 300 pF;(8)Turn-On Time: 8.0 us;(9)Turn-Off Time: 15 us. If you want to know more information such as the electrical characteristics about 2N3441A, please download the datasheet in www.seekic.com or www.chinaicmart.com.