2N3497

Maximum DC Collector Current :
Maximum Operating Temperature :
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 4 V
Packaging : Bulk
Maximum Operating Frequency : 150 MHz
Collector- Emitter Voltage VCEO Max : 120 V
Package / Case : TO-18
DC Collector/Base Gain hfe Min : 40 at 10 mA at 10 V


Features:

·  General-purpose silicon transistor for switching and amplifier applications.
·  Housed in TO-39 case.
·  Also available in chip form using the 5620 chip geometry.
·  The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases.


Specifications

Rating	Symbol	Rating	Unit
Collector-Emitter Voltage	VCEO	100	V
Collector-Base Voltage	VCBO	100	V
Emitter-Base Voltage	VEBO	6.0	V
Collector Current, Continuous	IC	500	mA
Power Dissipation, TA = 25 Derate above 25	PD	5.0 28.8	mW mW/
Operating Junction Temperature	TJ	-65 to +200
Storage Temperature	TSTG	-65 to +200