2N3506A

Features:

• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document: MIL-PRF-19500/349


Application

• General purpose switching transistor
• Low power
• NPN silicon transistor


Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	VCEO	40	Volts
Collector-base voltage	VCBO	60	Volts
Emitter-base voltage	VEBO	5	Volts
Collector Current-Continuous	IC	3	A
Power Dissipation, TA = 25 Derate linearly above 25	PT	1 5.71	W mW/
Power Dissipation, TA = 25 Derate linearly above 25	PT	5 28.6	W mW/
Thermal Resistance	RJA	175	/W
Operating Junction Temperature	Tj	-65 to +200
Storage Temperature	Tstg	-65 to +200

Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3506AJ)
• JANTX level (2N3506AJX)
• JANTXV level (2N3506AJV)
• JANS level (2N3506AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request