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Part Number: 2N3507AL

 

 

 

 

Description: SEMICOA offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2N3507ALJ)&#...


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2N3507AL General Description


SEMICOA offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3507ALJ)
• JANTX level (2N3507ALJX)
• JANTXV level (2N3507ALJV)
• JANS level (2N3507ALJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 072 for JANTXV and JANS
• Radiation testing (total dose) upon request

2N3507AL Maximum Ratings

Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
80
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
3
A
Power Dissipation, TA = 25
Derate linearly above 25
PT
1
5.71
W
mW/
Power Dissipation, TC = 25
Derate linearly above 25
PT
5
28.6
W
mW/
Thermal Resistance
RJA
175
/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200

2N3507AL Features

• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document: IL-PRF-19500/349

2N3507AL Typical Application

• General purpose switching transistor
• Low power
• NPN silicon transistor

2N3507AL datasheet

2N3001
PDF/DataSheet Download

  • Datasheet: 2N3001
  • File Size: 22768 KB
  • Manufacturer: CENTRAL [Central Semiconductor Corp]
  • Click here to Download

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    SEMICOA offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2N3507AJ)• JANTX level (2N3507AJX)• JANTXV level (2N3507AJV)• JANS level (2N3507AJS)• QCI to the applicable level• 100% die visual in...

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    2N3506A

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