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Part Number: 2N3553
Description: The device is a silicon NPN overlay transistor in a TO-39metal package with t...


Description: The device is a silicon NPN overlay transistor in a TO-39metal package with t...
The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case.
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage | open emitter | - | 65 | V |
| VCEX | collector-emitter voltage | IC 200 mA; VBE = -1.5 V | - | 65 | V |
| VCEO | collector-emitter voltage | open base; IC 200 mA | - | 40 | V |
| VEBO | emitter-base voltage | open collector | - | 4 | V |
| IC | collector current (DC) | - | 0.35 | A | |
| ICM | peak collector current | - | 1 | A | |
| Ptot | total power dissipation | up to Tmb = 25 °C | - | 7 | W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | junction temperature | - | 200 | °C |
2N3553
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