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Part Number: 2N3553

 

 

 

 

Description: The device is a silicon NPN overlay transistor in a TO-39metal package with t...


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2N3553 General Description


    The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case.

2N3553 Maximum Ratings

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO collector-base voltage open emitter - 65 V
VCEX collector-emitter voltage IC 200 mA; VBE = -1.5 V - 65 V
VCEO collector-emitter voltage open base; I 200 mA - 40 V
VEBO emitter-base voltage open collector - 4 V
IC collector current (DC)   - 0.35 A
ICM peak collector current   - 1 A
Ptot total power dissipation up to Tmb = 25 °C - 7 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C

2N3553 Typical Application

    The 2N3553 is intended for use in VHF and UHF  transmitting applications.

2N3553 datasheet

2N3553
PDF/DataSheet Download

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