2N3635, US $ 2.02-2.48 , Central Semiconductor, 2N3635 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00209715 Detail

2N3635: Transistors Bipolar (BJT) PNP Ampl/Switch

2N3635 Data Sheet

US $ 2.02~2.48 / Piece | Get Latest Price

Part Number:: 2N3635
Mfg:: Central Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	200 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-39
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-39

Features:

Ratings	Symbol	2N3634* 2N3635*	2N3636* 2N3637*	Unit
Collector-Emitter Voltage	V_CEO	140	175	V_dc
Collector-Base Voltage	V_CBO	140	175	V_dc
Emitter-Base Voltage	V_EBO	5.0		V_dc
Collector Current	I_C	1.0		A_dc
Total Power Dissipation @ T_A= +25⁰C⁽¹⁾ @ T_C = +25⁰C⁽²⁾	P_T	1.0 5.0		W W
Operating & Storage Junction Temperature Range	T_j, T_stg	-65 to +200		⁰C

*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices
1) Derate linearly 5.71 mW/⁰C for T_A > +25⁰C
2) Derate linearly 28.6 mW/⁰C for T_C > +25⁰C

Specifications

Ratings	Symbol	2N3634* 2N3635*	2N3636* 2N3637*	Unit
Collector-Emitter Voltage	V_CEO	140	175	Vdc
Collector-Base Voltage	V_CBO	140	175	Vdc
Emitter-Base Voltage	V_EBO	5.0		Vdc
Collector Current	I_C	1.0		Adc
Total Power Dissipation @ T_A= +25⁰C⁽¹⁾ @ T_C = +25⁰C⁽²⁾	P_T	1.0 5.0		W W
Operating & Storage Junction Temperature Range	T_j, T_stg	-65 to +200		⁰C

2N3635

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