Transistors Bipolar (BJT) NPN General Purpose
2N3700: Transistors Bipolar (BJT) NPN General Purpose
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 1 A |
| DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single |
| Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 200 C |
| Mounting Style : | Through Hole | Package / Case : | TO-18 |
| Packaging : | Bulk |
|
Ratings |
Symbol |
Value |
Unit |
| Collector-Emitter Voltage |
VCEO |
80 |
Vdc |
| Collector-Base Voltage |
VCBO |
140 |
Vdc |
| Emitter-Base Voltage |
VEBO |
7.0 |
Vdc |
|
Collector Current |
IC |
1.0 |
Adc |
|
Total Power Dissipation |
PT |
0.8
|
W
|
|
Operating & Storage Jct Temp Range |
Tj, Tstg |
-55 to +175 |
0C |
1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C.
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C.
| Technical/Catalog Information | 2N3700 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-18, Metal Case |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N3700 2N3700 497 3108 5 ND 49731085ND 497-3108-5 |