2N3859A

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Maximum DC Collector Current : 0.5 A
Packaging : Bulk


Features:

• This device designed for use as general purpose amplifier and
   switches requiring collector currents to 300mA.
• Sourced from Process 10.
• See PN100 for characteristics.


Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-base voltage	60	V
VCEO	Collector-emitter voltage	60	V
VEBO	Emitter-base voltage	6.0	V
IC	Collector Current-Continuous	500	mA
Tj,TST	Operating and Storage Junction Temperature Range	-55 ~ +150

Parameters:

Technical/Catalog Information	2N3859A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 1mA, 1V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3859A 2N3859A