2N3859A_D75Z

Transistors Bipolar (BJT) NPN Transistor General Purpose

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SeekIC No. : 00212722 Detail

2N3859A_D75Z: Transistors Bipolar (BJT) NPN Transistor General Purpose

floor Price/Ceiling Price

Part Number:
2N3859A_D75Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 250 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo    

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92-3 Kinked Lead
Maximum Operating Frequency : 250 MHz
Maximum DC Collector Current : 0.5 A
Packaging : Ammo


Parameters:

Technical/Catalog Information2N3859A_D75Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 1mA, 1V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N3859A_D75Z
2N3859A_D75Z



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