2N3904/3906

The 2N3904/3906 is a kind of NPN silicon general purpose transistor and it is available in TO-92 package.

There are some maximum ratings of 2N3904/3906 as follows.(1): collector-emitter voltage(VCEO) is 40 Vdc; (2): collector-base voltage(VCBO) is  60 Vdc; (3): emitterbase voltage(VEBO) is 6.0 Vdc; (4): collector current-continuous(IC) is 200 mAdc; (5): total device dissipation(PD) is 625 mW  at TA is 25 and is 5.0 mW/ at derate above 25; (6): total device dissipation(PD) is 1.5 watts at TC is 25 and is 12mW/ at derate above 25; (7): operating and storage junction temperature range is from -55  to 150; (8): the minimum collector-emitter breakdown voltage is 40 Vdc at IC is 1.0 mAdc, IB is 0; (9): the minimum collector-base breakdown voltage is 60 Vdc at IC is 10 Adc and IE is 0; (10): the minimum emitter-base breakdown voltage is 6.0 Vdc at IE is 10 Adc and IC is 0; (11): the minimum of DC current gain is 70 at IC is 1.0 mAdc, VCE is 1.0 Vdc; (12): the maximum collector-emitter saturation voltage is 0.2 Vdc at IC is 10 mAdc,IB is 1.0 mAdc and is 0.3 Vdc at IC is 50 mAdc,IB is 5.0 mAdc; (13): the maximum base-emitter saturation voltage is 0.85 Vdc at IC is 10 mAdc,IB is 1.0 mAdc and is 0.95 Vdc at IC is 50 mAdc,IB is 5.0 mAdc.

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