Transistors Bipolar (BJT) PNP Gen Pur SS
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.2 A |
| DC Collector/Base Gain hfe Min : | 30 at 0.1 mA at 1 V | Configuration : | Single |
| Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Box |
| 2N3905, 2N3906 | ||
| Collector-Emitter-voltage B open | - VCE0 | 40 V |
| Collector-Base-voltage E open | - VCE0 | 40 V |
| Emitter-Base-voltage C open | - VEB0 | 5 V |
| Power dissipation Verlustleistung | Ptot | 625 mW 1) |
| Collector current Kollektorstrom (dc) | - IC | 100 mA |
| Peak collector current Kollektorspitzenstrom | - ICM | 200 mA |
| Junction temp. Sperrschichttemperatur | Tj | 150°C |
| Storage temperature Lagerungstemperatur | TS | - 55.+ 150°C |