2N3906-AP

Maximum DC Collector Current :
Maximum Operating Temperature :
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 40 V
DC Collector/Base Gain hfe Min : 60 at 0.1 mA at 1 V


Features:

·SILICON EPITAXIAL PLANAR NPN TRANSISTOR
·TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY
·THE NPN COMPLEMENTARY TYPE IS 2N3904


Application

·WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
·SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-base Voltage (IE = 0)	-60	V
VCEO	Collector-emitter Voltage (IB = 0)	-40	V
VEBO	Emitter-base Voltage (IC = 0)	-6	V
IC	Collector Current	-200	mW
Ptot	Total Dissipation at TC = 25 oC	-625	mW
Tstg	Storage Temperature	-65 to 150	°C
Tj	Storage and Junction Temperature	150	°C

 

Parameters:

Technical/Catalog Information	2N3906-AP
Vendor	Micro Commercial Co
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	200mA
Power - Max	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	50nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3906 AP 2N3906AP 2N3906 APTB ND 2N3906APTBND 2N3906-APTB